Quantifying the electrical transport characteristics of electron-doped La0.7Ce0.3MnO3 thin films through hopping energies, Mn valence, and carrier localization length

dc.contributor.author	Werner, Robert
dc.contributor.author	Kölle, Dieter
dc.contributor.author	Kleiner, Reinhold
dc.date.accessioned	2015-11-05T10:12:21Z
dc.date.available	2015-11-05T10:12:21Z
dc.date.issued	2015
dc.identifier.issn	0022-3697
dc.identifier.uri	http://hdl.handle.net/10900/66241
dc.language.iso	en	de_DE
dc.publisher	Pergamon - Elsevier Science Ltd	de_DE
dc.relation.uri	http://dx.doi.org/10.1016/j.jpcs.2014.12.014	de_DE
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject.ddc	530	de_DE
dc.title	Quantifying the electrical transport characteristics of electron-doped La0.7Ce0.3MnO3 thin films through hopping energies, Mn valence, and carrier localization length	de_DE
dc.type	Article	de_DE
utue.quellen.id	20150901145020_00957
utue.publikation.seiten	26-33	de_DE
utue.personen.roh	Thiessen, A.
utue.personen.roh	Beyreuther, E.
utue.personen.roh	Werner, R.
utue.personen.roh	Koelle, D.
utue.personen.roh	Kleiner, R.
utue.personen.roh	Eng, L. M.
dcterms.isPartOf.ZSTitelID	Journal of Physics and Chemistry of Solids	de_DE
dcterms.isPartOf.ZS-Volume	80	de_DE
utue.fakultaet	07 Mathematisch-Naturwissenschaftliche Fakultät	de_DE