Low-Temperature Atomic Layer Deposited Oxide on Titanium Nitride Electrodes Enables Culture and Physiological Recording of Electrogenic Cells

Dollt, Michele; Reh, Miriam; Metzger, Michael; Heusel, Gerhard; Kriebel, Martin; Bucher, Volker; Zeck, Guenther

dc.contributor.author	Dollt, Michele
dc.contributor.author	Reh, Miriam
dc.contributor.author	Heusel, Gerhard
dc.contributor.author	Kriebel, Martin
dc.contributor.author	Zeck, Günther
dc.date.accessioned	2021-12-20T07:46:54Z
dc.date.available	2021-12-20T07:46:54Z
dc.date.issued	2020
dc.identifier.issn	1662-453X
dc.identifier.uri	http://hdl.handle.net/10900/121856
dc.language.iso	en	de_DE
dc.publisher	Frontiers Media Sa	de_DE
dc.relation.uri	http://dx.doi.org/10.3389/fnins.2020.552876	de_DE
dc.subject.ddc	570	de_DE
dc.subject.ddc	610	de_DE
dc.title	Low-Temperature Atomic Layer Deposited Oxide on Titanium Nitride Electrodes Enables Culture and Physiological Recording of Electrogenic Cells	de_DE
dc.type	Article	de_DE
utue.quellen.id	20210304112512_01473
utue.personen.roh	Dollt, Michele
utue.personen.roh	Reh, Miriam
utue.personen.roh	Metzger, Michael
utue.personen.roh	Heusel, Gerhard
utue.personen.roh	Kriebel, Martin
utue.personen.roh	Bucher, Volker
utue.personen.roh	Zeck, Guenther
dcterms.isPartOf.ZSTitelID	Frontiers in Neuroscience	de_DE
dcterms.isPartOf.ZS-Issue	Article 552876	de_DE
dcterms.isPartOf.ZS-Volume	14	de_DE
utue.fakultaet	04 Medizinische Fakultät	de_DE
utue.fakultaet	07 Mathematisch-Naturwissenschaftliche Fakultät	de_DE